Related Experiment Video
Updated: Jul 11, 2025

Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
Robust photogalvanic effect, full spin polarization and pure spin current in the BiC photodetector by vacancy and
Xi Fu1,2, Jian Lin2, Chaozheng He3
1College of Science, Hunan Universtiy of Science and Engineering, Yongzhou 425199, People's Republic of China.
Abstract:
The photogalvanic effects (PGEs) in low-dimensional devices have attracted great interests recently. Herein, based on non-equilibrium Green's function combined with density functional theory, we investigated spin-dependent PGE phenomena in the BiC photodetector with the linearly polarized light and zero bias. Due to the presence of strong spin-orbit interaction (SOI) andC3vsymmetry for the BiC monolayer, the armchair and zigzag BiC photodetectors can produce robust spin-dependent PGEs which possess the cos(2θ) and sin(2θ) relations on the photon energies, respectively. Especially, the pristine armchair and armchair Bi-vacancy BiC photodetectors can produce fully spin polarization, and pure spin current was found in the pristine armchair and zigzag BiC photodetector, respectively. Furthermore, after introducing the Bi-vacancy, C-vacancy, Bi-doping and C-doping respectively, the BiC photodetector can produce higher spin-dependent PGEs for theirCssymmetry. Additionally, the behaviors of spin-dependent photoresponse are highly anisotropic which can be tuned by the photon energy. This work suggested great potential applications of the BiC monolayer on PGE-driven photodetectors in low energy-consumption optoelectronics and spintronic devices.
Related Concept Videos
P-N junction
Colors and Magnetism
When atoms or molecules absorb light at the proper frequency, their electrons are excited to higher-energy orbitals. For many main group atoms and molecules, the absorbed photons are in the ultraviolet range of the electromagnetic spectrum, which cannot be detected by the human eye. For coordination compounds, the energy difference between the d orbitals often allows photons in the visible range to be absorbed and emitted, which is seen as colors by the human...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Diode: Reverse bias

