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Large-Area Growth of Ferroelectric 2D γ-In2 Se3 Semiconductor by Spray Pyrolysis for Next-Generation Memory.

Taebin Lim1, Jae Heon Lee2, Donggyu Kim2

  • 1Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea.

Advanced Materials (Deerfield Beach, Fla.)
|November 6, 2023
PubMed
Summary

Large-area manufacturing of indium selenide (In2Se3) thin films for next-generation memory devices is now possible using spray pyrolysis. This technique enables the creation of indium selenide ferroelectric-semiconductor field-effect transistors with excellent performance and uniformity.

Keywords:
ferroelectric-semiconductor field effect transistorindium selenidelarge-area growthmemoryspray pyrolysis deposition

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Indium selenide (In2Se3) is a 2D ferroelectric-semiconductor with potential for advanced memory devices.
  • Large-area manufacturing of In2Se3 remains a significant hurdle for practical applications.

Purpose of the Study:

  • To develop a scalable method for producing large-area In2Se3 thin films.
  • To fabricate and characterize In2Se3-based ferroelectric-semiconductor field-effect transistors (FeS-FETs) for memory applications.

Main Methods:

  • Spray pyrolysis technique was employed for the growth of In2Se3 thin films on large-area glass substrates (15 cm × 15 cm).
  • Polycrystalline γ-In2Se3 films were deposited at a substrate temperature of 275 °C.
  • Fabrication and electrical characterization of In2Se3 FeS-FETs were performed.

Main Results:

  • Successful growth of large-area polycrystalline γ-In2Se3 thin films.
  • In2Se3 FeS-FETs exhibited a substantial hysteresis window of 40.3 V.
  • Devices demonstrated excellent uniformity, high electron field-effect mobility (0.97 cm2 V−1 s−1), and a high on/off current ratio (>10^7).

Conclusions:

  • Spray pyrolysis is a viable technique for the scalable production of In2Se3 thin films.
  • The demonstrated In2Se3 FeS-FETs show promising memory behavior for next-generation electronic devices.
  • This work paves the way for the integration of 2D ferroelectric-semiconductors in large-area electronic applications.