Large-Area Growth of Ferroelectric 2D γ-In₂ Se₃ Semiconductor by Spray Pyrolysis for Next-Generation Memory

In₂ Se₃ , 2D ferroelectric-semiconductor, is a promising candidate for next-generation memory device because of its outstanding electrical properties. However, the large-area manufacturing of In₂ Se₃ is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large-area In₂ Se₃ thin film. A polycrystalline γ-In₂ Se₃ layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In₂ Se₃ ferroelectric-semiconductor field effect transistor (FeS-FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS-FET exhibits an electron field effect mobility of 0.97 cm² V^-1 s^-1 and an on/off current ratio of >10⁷ in the transfer curves. The memory behavior of the large-area, In₂ Se₃ FeS-FETs for next-generation memory is demonstrated.