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Updated: Jul 11, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates
Michael T Jones1,2, Md Serajum Monir2,3, Felix N Krauth1,2
1Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia.
Researchers engineered electron spin qubits for faster quantum computing. By optimizing donor atom placement in silicon, they achieved significantly improved single- and two-qubit gate speeds and fidelities, crucial for scalable quantum processors.
Area of Science:
- Quantum computing
- Solid-state quantum information science
- Atomic-scale device engineering
Background:
- Universal quantum computing demands high-fidelity, fast single- and two-qubit gates with individual qubit addressability to minimize decoherence.
- Phosphorus donor electron spin qubits in silicon offer long coherence times and high fidelities, making them a promising platform for scalable quantum computing.
- Current methods for individual qubit addressability using hyperfine interactions are limited by a small hyperfine Stark coefficient, restricting single-qubit gate speeds.
Purpose of the Study:
- To engineer enhanced hyperfine Stark shifts in silicon-based electron spin qubits.
- To demonstrate faster single- and two-qubit gate operations with high fidelity and selectivity.
- To explore the potential of molecular qubits for scalable quantum computing.
Main Methods:
- Utilized scanning tunneling microscopy (STM) lithography to precisely place phosphorus donors in silicon along specific crystallographic axes ([110] and [310] orientations).
- Investigated molecular 2P qubits with varying interatomic spacings (∼0.8 nm and ≥5 nm) to engineer hyperfine Stark shifts.
- Employed NEMO atomistic calculations to predict hyperfine Stark coefficients and simulated quantum gate operations with Gaussian pulse shaping.
Main Results:
- Achieved a factor of 10 increase in hyperfine Stark shift (up to 11.2 MHz/MV m-1) by controlling donor placement along different crystallographic axes.
- NEMO calculations predict potential hyperfine Stark coefficients up to ∼70 MHz/MV m-1 in 2P molecules with donors ≥5 nm apart.
- Demonstrated feasibility of fast single-qubit gates (10 ns rotation time) with ∼99% fidelity and potential for >99.99% control fidelity with optimized gate times, without affecting neighboring qubits.
Conclusions:
- Engineering the hyperfine Stark shift by controlling donor atom placement is a viable strategy to enhance qubit addressability and gate speeds in silicon quantum processors.
- Molecular qubits offer a pathway to significantly faster and more selective qubit operations, overcoming limitations of single-donor qubits.
- The demonstrated advancements pave the way for building high-performance, scalable quantum computers based on silicon electron spin qubits.
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