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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Ap-type dopable ultrawide-bandgap oxide.

John L Lyons1, Anderson Janotti2

  • 1Center for Computational Materials Science, US Naval Research Laboratory, Washington, DC 20375, United States of America.

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|November 6, 2023
PubMed
Summary
This summary is machine-generated.

Ultrawide-bandgap (UWBG) semiconductors struggle with p-type conductivity due to self-trapped holes. Rutile silicon dioxide (r-SiO2) shows potential for efficient p-type doping, unlike other UWBG oxides.

Keywords:
first-principles calculationsp-type conductivityp-type dopingultrawide-bandgap oxides

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Semiconductor Research

Background:

  • Ultrawide-bandgap (UWBG) semiconductors typically exhibit unipolar doping, limiting their application potential.
  • Achieving p-type conductivity in UWBG oxides is challenging due to the formation of self-trapped holes (small polarons).
  • Rutile germanium oxide (r-GeO2) was recently proposed as a potential material to overcome this limitation, but with high acceptor ionization energies.

Purpose of the Study:

  • To investigate the potential of rutile silicon dioxide (r-SiO2) for p-type conductivity.
  • To compare the properties of r-SiO2 with other rutile oxides (TiO2, SnO2, GeO2) regarding hole trapping and acceptor ionization.
  • To assess the viability of r-SiO2 as a promising UWBG material for efficient p-type doping.

Main Methods:

  • Utilized hybrid density functional calculations to study the electronic properties of various rutile oxides.
  • Analyzed hole trapping mechanisms and acceptor ionization energies in acceptor-doped rutile structures.
  • Calculated impurity formation energies to assess compensation effects by native defects like oxygen vacancies.

Main Results:

  • Rutile titanium dioxide (TiO2) and tin dioxide (SnO2) exhibit strong hole trapping at acceptor impurities, consistent with prior research.
  • Self-trapped holes are found to be unstable in rutile silicon dioxide (r-SiO2), which has a wide band gap of approximately 8.5 eV.
  • r-SiO2 demonstrates the lowest Group-III acceptor ionization energies among the studied rutile oxides, comparable to gallium nitride (GaN).

Conclusions:

  • Rutile silicon dioxide (r-SiO2) emerges as a promising candidate for achieving efficient p-type conductivity in ultrawide-bandgap oxides.
  • The instability of self-trapped holes and low acceptor ionization energies in r-SiO2 make it a potential outlier among UWBG materials.
  • Acceptor impurities in r-SiO2 have sufficiently low formation energies, suggesting minimal compensation by oxygen vacancies under oxygen-rich conditions.