Related Experiment Video
Updated: Jul 11, 2025

Stiffness Measurement of Soft Silicone Substrates for Mechanobiology Studies Using a Widefield Fluorescence Microscope
Published on: July 3, 2018
In Situ Self-Fluorescence 3D Imaging of Micro/Nano Damage in Silicone Gel for Understanding Insulation Failure under
Xinyu Tang1, Wenxia Sima1, Potao Sun1
1State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University, Chongqing 400044, China.
Abstract:
Strong electromagnetic and heat flux stresses can induce severe damage to solid insulation materials, leading to faults in power equipment and power electronics devices. However, in the absence of suitable in situ imaging methods for observing the development and morphology of electrical damage within insulation materials, the mechanism of insulation failure under high-frequency electric fields has remained elusive. In this work, a recently discovered fluorescence self-excitation phenomenon in electrical damage channels of polymers is used as the basis for a laser confocal imaging method that is able to realize three-dimensional (3D) in situ imaging of electrical tree channels in silicone gel through nondestructive means. Based on the reconstructed morphology of the damaged area, a spatial equivalent calculation model is proposed for analysis of the 3D geometric features of electrical trees. The insulation failure mechanism of silicone gel under electric fields of different frequencies is analyzed through ReaxFF molecular dynamics simulations of the thermal cracking process. This work provides a new method for in situ nondestructive 3D imaging of micro/nanoscale damage structures within polymers with potential applications to material analysis and defect diagnosis.
More Related Videos
09:26In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
Published on: June 26, 2015
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016