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Updated: Jul 11, 2025

Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy.
Marti Checa1, Addis S Fuhr2, Changhyo Sun3
1Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA. checam@ornl.gov.
High-speed sparse scanning Kelvin probe force microscopy enables sub-second imaging of nanoscale charge dynamics. This breakthrough visualizes ion diffusion and oxygen vacancies, advancing microelectronics and energy storage research.
Area of Science:
- Materials Science
- Surface Science
- Physical Chemistry
Background:
- Understanding local dynamic charge processes is crucial for microelectronics and energy storage.
- Mapping charge carrier motion across multiple length and timescales is essential.
- Material heterogeneities significantly influence charge dynamics.
Purpose of the Study:
- To introduce a novel high-speed sparse scanning Kelvin probe force microscopy technique.
- To enable sub-second imaging of nanoscale charge dynamics.
- To visualize and quantify ionic charge carrier motion in material systems.
Main Methods:
- High-speed sparse scanning Kelvin probe force microscopy (KPFM) with image reconstruction.
- Sub-second imaging (over 3 frames per second) of nanoscale charge dynamics.
- Integration with macroscale device measurements.
Main Results:
- Visualized electrochemically mediated diffusion of mobile surface ions on LaAlO3/SrTiO3 devices.
- Monitored oxygen vacancy diffusion at the single grain level in polycrystalline TiO2.
- Determined a charge diffusion activation energy of 0.18 eV for TiO2, confirmed by DFT calculations.
Conclusions:
- The developed high-speed KPFM technique significantly improves imaging rates for nanoscale charge dynamics.
- The method effectively visualizes ionic charge carrier motion, impacting understanding of heterointerfaces and material properties.
- This versatile technique offers new possibilities for studying charge transport in microelectronics and nanoscale systems.
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