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Related Concept Videos

Carrier Generation and Recombination01:22

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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Related Experiment Video

Updated: Jul 11, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Computational-fitting method for mobility extraction in GaN HEMT.

Kuan-Chang Chang1, Xibei Feng1, Huangbai Liu1

  • 1School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School Shenzhen 518055 China lilei@pkusz.edu.cn.

RSC Advances
|November 9, 2023
PubMed
Summary
This summary is machine-generated.

This study introduces a new computational method to accurately measure the electron mobility in gallium nitride (GaN) High Electron Mobility Transistors (HEMTs). The technique overcomes limitations of traditional methods, offering a more reliable way to determine device performance.

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Area of Science:

  • Semiconductor Physics
  • Materials Science
  • Electronics Engineering

Background:

  • Gallium nitride (GaN) exhibits high electron mobility, making it crucial for advanced electronic devices.
  • Traditional methods like Hall effect and transfer length method struggle to accurately determine GaN High Electron Mobility Transistor (HEMT) mobility due to factors like non-gate region resistance and high costs.

Purpose of the Study:

  • To develop an effective and accurate computational-fitting method for extracting the carrier mobility of GaN HEMTs.
  • To address the limitations of existing techniques in accurately measuring mobility and accounting for non-gate resistance.

Main Methods:

  • The proposed method involves measuring source-drain resistance across a narrow range of overdrive voltages.
  • It utilizes the assumption that the sum of transconductance and capacitance remains constant within this range.
  • A unique function fitting the total resistance versus overdrive voltage is employed to extract mobility and non-gate resistance.

Main Results:

  • The computational-fitting method successfully extracts carrier mobility and non-gate resistance.
  • The feasibility and reliability of this novel approach have been experimentally verified.

Conclusions:

  • This new method provides an accurate and effective alternative for determining GaN HEMT mobility.
  • It overcomes the drawbacks of classical techniques, offering a cost-effective and precise solution for device characterization.