Related Experiment Video
Updated: Jul 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Dielectric Constant in Nanoscale Bubbles on MoS2
Haesol Kim1, Dohyeon Jeon1, Minji Gu1
1Department of Physics, Memory and Catalyst Research Center, Hankuk University of Foreign Studies, Yongin 17035, Republic of Korea.
Nanoscale bubbles in molybdenum disulfide (MoS2) exhibit a significantly higher dielectric constant (κ) than flat regions. This enhancement is due to strain-induced charge carrier increases, crucial for 2D material device design.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Nanoscale bubbles are common in two-dimensional (2D) materials like MoS2 during substrate transfer.
- Localized strain within these nanobubbles affects material properties, but the dielectric constant (κ) remains poorly understood.
- Understanding dielectric properties is vital for optimizing 2D material-based devices.
Purpose of the Study:
- To measure and understand the dielectric constant (κ) within MoS2 nanobubbles.
- To investigate the relationship between strain, charge carriers, and dielectric properties in 2D materials.
- To provide insights for designing advanced optoelectrical devices.
Main Methods:
- Utilized electrostatic force microscopy to probe polarization forces.
- Measured dielectric constant (κ) in MoS2 nanobubbles and flat regions.
- Employed calculations based on the Clausius-Mossotti relation for validation.
Main Results:
- Observed significantly higher dielectric constants (κ = 6-8) in MoS2 nanobubbles compared to flat regions (κ ≈ 3).
- Found that κ values were independent of nanobubble size.
- Attributed the enhanced κ to increased charge carriers from strain-induced bandgap reduction.
Conclusions:
- Strain in MoS2 nanobubbles locally enhances the dielectric constant.
- The findings correlate well with theoretical predictions using the Clausius-Mossotti relation.
- Results offer fundamental understanding and guidance for fabricating high-performance 2D material optoelectrical devices.
Related Concept Videos
Susceptibility, Permittivity and Dielectric Constant
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Bond Polarity, Dipole Moment, and Percent Ionic Character
Molecular Shape and Polarity
Potential Due to a Polarized Object
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's...

