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Related Experiment Video

Updated: Jul 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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Published on: May 13, 2020

Phase Change-Induced Magnetic Switching through Metal-Insulator Transition in VO₂/TbFeCo Films.

Chung T Ma¹, Salinporn Kittiwatanakul^1,2, Apiprach Sittipongpittaya¹

¹Department of Physics, University of Virginia, Charlottesville, VA 22904, USA.

Nanomaterials (Basel, Switzerland)

|November 10, 2023

Summary

Strain-induced magnetic switching in spintronics is achieved by leveraging the metal-insulator transition of vanadium dioxide (VO2). This transition alters the magnetic anisotropy and magnetization of adjacent terbium iron cobalt (TbFeCo) layers.

Keywords:

ferrimagnetic magnetic switching metal–insulator transition

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Published on: July 3, 2015

Area of Science:

Materials Science
Condensed Matter Physics
Spintronics

Background:

Manipulating spin in magnetic materials is crucial for spintronics.
Strain engineering offers a pathway for magnetic switching.

Purpose of the Study:

To investigate the strain-induced magnetic property changes in a TbFeCo layer due to the metal-insulator transition of VO2.
To demonstrate control over magnetic anisotropy and magnetization via phase transition.

Main Methods:

Fabrication of VO2/TiO2 thin films and VO2/TbFeCo bilayers.
Anomalous Hall effect measurements to probe magnetic properties.
Atomistic simulations to confirm the origin of magnetic changes.

Main Results:

VO2 exhibits lattice expansion across its metal-insulator transition.
This expansion induces strain in the adjacent TbFeCo layer.
TbFeCo loses perpendicular magnetic anisotropy and magnetization shifts from out-of-plane to in-plane.

Conclusions:

The metal-insulator transition of VO2 can effectively tune the magnetic properties of TbFeCo.
This provides a method for controlling magnetic properties through phase transitions.
The findings lay the foundation for strain-controlled spintronic devices.