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MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

MOSFET: Depletion Mode

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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Related Experiment Video

Updated: Jul 11, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

Integrated Logic Circuits Based on Wafer-Scale 2D-MoS₂ FETs Using Buried-Gate Structures.

Ju-Ah Lee^1,2, Jongwon Yoon¹, Seungkwon Hwang¹

¹Department of Energy and Electronic Materials, Surface Materials Division, Korea Institute of Materials Science (KIMS), Changwon 51508, Republic of Korea.

Nanomaterials (Basel, Switzerland)

|November 10, 2023

Summary

Buried-gate molybdenum disulfide (MoS₂) transistors overcome local back-gate limitations, significantly enhancing electrical properties for advanced logic circuits. This innovation paves the way for high-performance integrated electronics.

Keywords:

buried-gate structure gate controllability logic circuits molybdenum disulfide wafer-scale integration

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Two-dimensional (2D) transition-metal dichalcogenides (TMDs), like molybdenum disulfide (MoS₂), offer unique electrical properties for next-generation integrated circuits.
Local back-gate transistors using MoS₂ on silicon substrates suffer from degraded electrical characteristics due to non-uniform field control from gate sidewalls.

Purpose of the Study:

To address the limitations of local back-gate MoS₂ transistors.
To enhance the performance of MoS₂-based transistors and integrated logic circuits.

Main Methods:

Fabrication of buried-gate MoS₂ transistors with gate electrodes embedded in the silicon substrate.
Characterization and comparison of device parameters (field-effect mobility, on/off current ratio, breakdown voltage) against local back-gate designs.
Integration of buried-gate MoS₂ transistors into various logic gates (inverters, NAND, NOR, AND, OR) on a 2-inch wafer scale.

Main Results:

Significant improvements in field-effect mobility (0.166 to 1.08 cm²/V·s).
Dramatically enhanced on/off current ratio (4.90 × 10⁵ to 1.52 × 10⁷).
Increased breakdown voltage of the gate dielectric (15.73 to 27.48 V).

Conclusions:

Buried-gate architecture effectively resolves the non-uniform field controllability issues of local back-gate designs.
The fabricated buried-gate MoS₂ transistors demonstrate superior performance metrics suitable for high-performance logic circuits.
Successful wafer-scale integration of diverse logic gates showcases the potential of this technology for future electronic devices.