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Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1-V)2O3
Michael Rodriguez-Fano1, Mohamad Haydoura1, Julien Tranchant1
1Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS, F-44000 Nantes, France.
ACS Applied Materials & Interfaces
|November 14, 2023
Summary
This study explores V-substituted Cr2O3 for advanced nonvolatile memory. Tuning V content in (Cr1-xVx)2O3 solid solutions significantly enhances memory window performance, confirming potential for correlated insulator memory applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid-State Chemistry
Background:
- Nonvolatile memory technologies face limitations.
- Correlated insulators offer promising alternatives via insulator-to-metal transitions.
- Previous studies focused on narrow-gap compounds with limited memory windows.
Purpose of the Study:
- Investigate V-substituted Cr2O3 ((Cr1-xVx)2O3) for enhanced memory applications.
- Explore the full range of chemical composition (0 < x < 1).
- Evaluate performance in thin films, single crystals, and polycrystalline powders.
Main Methods:
- Synthesis of (Cr1-xVx)2O3 compounds across the composition range.
- Characterization using X-ray diffraction and Raman scattering.
- Measurement of optical band gap and resistivity.
- Fabrication and testing of Metal-Insulator-Metal (MIM) devices for resistive switching.
Main Results:
- All compounds formed a solid solution with consistent crystalline structure.
- Optical band gap decreased from 3 eV (Cr2O3) to 0 eV (V2O3).
- Resistivity decreased by nearly 5 orders of magnitude with increasing V content.
- Reversible resistive switching observed, with a 50 nm (Cr0.30V0.70)2O3 film showing high endurance (1000 cycles) and a memory window 3 orders of magnitude larger than (Cr0.05V0.95)2O3.
Conclusions:
- Tuning V content in (Cr1-xVx)2O3 allows control over band gap and resistivity.
- This tunability enables a wide range of memory windows.
- Correlated insulators, specifically (Cr1-xVx)2O3, show significant potential for next-generation nonvolatile memory devices.
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