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Related Concept Videos

Band Theory02:35

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When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Enhancing the Resistive Memory Window through Band Gap Tuning in Solid Solution (Cr1-V)2O3.

Michael Rodriguez-Fano1, Mohamad Haydoura1, Julien Tranchant1

  • 1Institut des Matériaux Jean Rouxel, IMN, Université de Nantes, CNRS, F-44000 Nantes, France.

ACS Applied Materials & Interfaces
|November 14, 2023
PubMed
Summary

This study explores V-substituted Cr2O3 for advanced nonvolatile memory. Tuning V content in (Cr1-xVx)2O3 solid solutions significantly enhances memory window performance, confirming potential for correlated insulator memory applications.

Keywords:
V-substituted Cr2O3band gapnonvolatile memoryresistive switchingsolid solution

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Solid-State Chemistry

Background:

  • Nonvolatile memory technologies face limitations.
  • Correlated insulators offer promising alternatives via insulator-to-metal transitions.
  • Previous studies focused on narrow-gap compounds with limited memory windows.

Purpose of the Study:

  • Investigate V-substituted Cr2O3 ((Cr1-xVx)2O3) for enhanced memory applications.
  • Explore the full range of chemical composition (0 < x < 1).
  • Evaluate performance in thin films, single crystals, and polycrystalline powders.

Main Methods:

  • Synthesis of (Cr1-xVx)2O3 compounds across the composition range.
  • Characterization using X-ray diffraction and Raman scattering.
  • Measurement of optical band gap and resistivity.
  • Fabrication and testing of Metal-Insulator-Metal (MIM) devices for resistive switching.

Main Results:

  • All compounds formed a solid solution with consistent crystalline structure.
  • Optical band gap decreased from 3 eV (Cr2O3) to 0 eV (V2O3).
  • Resistivity decreased by nearly 5 orders of magnitude with increasing V content.
  • Reversible resistive switching observed, with a 50 nm (Cr0.30V0.70)2O3 film showing high endurance (1000 cycles) and a memory window 3 orders of magnitude larger than (Cr0.05V0.95)2O3.

Conclusions:

  • Tuning V content in (Cr1-xVx)2O3 allows control over band gap and resistivity.
  • This tunability enables a wide range of memory windows.
  • Correlated insulators, specifically (Cr1-xVx)2O3, show significant potential for next-generation nonvolatile memory devices.