Related Experiment Video
Updated: Jul 12, 2026

Fabrication And Characterization Of Photonic Crystal Slow Light Waveguides And Cavities
Published on: November 30, 2012
Simultaneous improvement of polarization and bandgap by finite solid solution engineering
Fei Guo1, Rui Liu2, Siyuan Guo1
1School of Science, Inner Mongolia University of Technology, Hohhot, 010051, P. R. China. applegf123@sina.com.
Abstract:
A narrow-bandgap-induced potential field always results in decreased photovoltaic performance. Here, a finite solid solution was designed to explore the simultaneous improvement of the polarization property and bandgap obtained from the critical effect in which BiMnO3 (BM) enters the Na0.5Bi0.5TiO3 (NBT) crystal lattice, resulting in a strong lattice expansion; by contrast, the incorporation of Mn without a d-orbital weakened the orbital hybridization accompanied by Jahn-Teller (J-T) distortion to reduce the optical bandgap. A narrow bandgap of 2.90 eV and polarization of 65.9 μC cm-2 were achieved by finite solid solution engineering. The open-circuit voltage and the short-circuit current with a BM doping component of 0.04 reached as high as 1.1 V and 0.0132 mA cm-2, respectively. This work provides an optimized strategy for the mutual benefit of the polarization and bandgap by finite solid solution engineering.
Related Concept Videos
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Energy Bands in Solids
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states that no two...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

