High precision of sign language recognition based on In₂O₃transistors gated by AlLiO solid electrolyte

In recent years, the synaptic properties of transistors have been extensively studied. Compared with liquid or organic material-based transistors, inorganic solid electrolyte-gated transistors have the advantage of better chemical stability. This study uses a simple, low-cost solution technology to prepare In₂O₃transistors gated by AlLiO solid electrolyte. The electrochemical performance of the device is achieved by forming a double electric layer and electrochemical doping, which can mimic basic functions of biological synapses, such as excitatory postsynaptic current, paired-pulse promotion, and spiking time-dependent plasticity. Furthermore, complex synaptic behaviors such as Pavlovian classical conditioning is successfully emulated. With a 95% identification accuracy, an artificial neural network based on transistors is built to recognize sign language and enable sign language interpretation. Additionally, the handwriting digit's identification accuracy is 94%. Even with various levels of Gaussian noise, the recognition rate is still above 84%. The above findings demonstrate the potential of In₂O₃/AlLiO TFT in shaping the next generation of artificial intelligence.