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Effect of Noncircular Channel on Distribution of Threshold Voltage in 3D NAND Flash Memory

Donghyun Go1, Gilsang Yoon1, Jounghun Park1

  • 1Department of Electrical Engineering, Pohang University of Science and Technology, Pohang 37673, Republic of Korea.

Micromachines
|November 25, 2023
PubMed

Keywords:
3D NAND flash memoryTCAD simulationnoncircular cellspikethreshold voltage distributiontrapped charge

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