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Updated: Jul 10, 2025

Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
Stanislav Tyaginov1, Erik Bury1, Alexander Grill1
1Imec, Kapeldreef 75, 3001 Leuven, Belgium.
Abstract:
We develop a compact physics model for hot-carrier degradation (HCD) that is valid over a wide range of gate and drain voltages (Vgs and Vds, respectively). Special attention is paid to the contribution of secondary carriers (generated by impact ionization) to HCD, which was shown to be significant under stress conditions with low Vgs and relatively high Vds. Implementation of this contribution is based on refined modeling of carrier transport for both primary and secondary carriers. To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages {Vgs,Vds}.
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