Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range

Area of Science:

• Semiconductor device physics
• Reliability engineering
• Materials science

Background:

• Hot-carrier degradation (HCD) is a critical reliability concern in semiconductor devices.
• Existing models may not fully capture HCD under diverse operating conditions, particularly the role of secondary carriers.
• Understanding HCD mechanisms is essential for designing robust and long-lasting electronic components.

Purpose of the Study:

• To develop a compact and accurate physics-based model for hot-carrier degradation (HCD).
• To incorporate the significant contribution of secondary carriers, generated via impact ionization, into the HCD model.
• To ensure the model's validity across a wide spectrum of gate (Vgs) and drain (Vds) voltages.

Main Methods:

• Development of a refined physics model for carrier transport, accounting for both primary and secondary carriers.
• Integration of impact ionization mechanisms to model secondary carrier generation.
• Experimental validation using foundry-quality n-channel transistors under a broad range of stress voltages {Vgs, Vds}.

Main Results:

• The developed compact physics model demonstrates validity over a wide range of Vgs and Vds.
• The model accurately captures the significant contribution of secondary carriers to HCD, especially under low Vgs and high Vds stress conditions.
• Experimental data confirms the model's predictive capabilities for hot-carrier degradation.

Conclusions:

• The new compact physics model provides a more comprehensive understanding of hot-carrier degradation.
• Accurate modeling of secondary carriers is crucial for predicting semiconductor device reliability under various stress conditions.
• This model can aid in the design of more robust and reliable semiconductor devices.