Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

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Updated: Jul 19, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
10:53

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

13.1K

Xiazhi Zou1,2, Jiayi Yang1,2, Qifeng Qiao3

  • 1School of Microelectronics, Shanghai University, Shanghai 200444, China.

Micromachines
|November 25, 2023
PubMed

Keywords:
DLTSGaN HEMTcharacterization methodstrap

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