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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

RC Circuits: Charging A Capacitor

RC Circuits: Charging A Capacitor

A circuit containing resistance and capacitance is called an RC circuit. A capacitor is an electrical component that stores electric charge by storing energy in an electric field. Consider a simple RC circuit having a DC (direct current) voltage source ε, a resistor R, a capacitor C, and a two-way position switch. In the circuit, the capacitor can be charged or discharged depending on the position of the switch.
When the switch is moved to connect the battery, the circuit reduces to a simple...

Capacitors and Capacitance

Capacitors and Capacitance

A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...

PI Controller: Design

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Proportional Integral (PI) controllers are a fundamental component in modern control systems, widely used to enhance performance and mitigate steady-state errors. They are particularly effective in applications such as automatic brightness adjustment on smartphones, where they excel at mitigating steady-state errors for step-function inputs. Unlike PD controllers, which require time-varying errors to function optimally, PI controllers leverage their integral component to address residual...

Capacitors

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Capacitors play a crucial role in car radios, where they filter and store frequencies to ensure clear signal reception. Essentially serving as energy storage devices, capacitors store energy within their electric field and are composed of two parallel conducting plates separated by a dielectric.
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Patterned Photostimulation with Digital Micromirror Devices to Investigate Dendritic Integration Across Branch Points

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High Dynamic Pixel Structure Based on an Adaptive Integrating Capacitor.

Suiyang Liu¹, Zhongjie Guo¹, Ruiming Xu¹

¹Department of Electronic Engineering, Xi'an University of Technology, No. 5, Jinhua South Road, Xi'an 710048, China.

Sensors (Basel, Switzerland)

|November 25, 2023

Summary

This summary is machine-generated.

This study introduces a novel infrared image sensor pixel structure using adaptive capacitance. This design overcomes the trade-off between noise and full well capacity, significantly enhancing dynamic range for infrared imaging.

Keywords:

CMOS infrared image sensor adaptive capacitance high dynamic range large full well capacity

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Area of Science:

Infrared imaging technology
Semiconductor device physics

Background:

Infrared focal plane integration challenges dynamic range improvement.
A key limitation is the trade-off between noise and full well capacity.

Purpose of the Study:

To propose a highly dynamic pixel structure for infrared image sensors.
To address the limitations of conventional pixel designs in varying light conditions.

Main Methods:

Utilized an adaptive capacitance design employing an inversion MOS capacitor.
Implemented a 12,288 × 12,288 pixel array using 55 nm CMOS process technology.

Main Results:

The proposed pixel structure exhibits adaptive capacitance changing from 6.5 fF to 37.5 fF with increasing light intensity.
Achieved a small pixel size (5.5 µm × 5.5 µm) with a large full well capacity (1.31 Me⁻).
Demonstrated a variable conversion gain, noise below 0.43 e⁻, and a dynamic range exceeding 130 dB.

Conclusions:

The adaptive capacitance pixel structure effectively resolves the noise-full well capacity conflict.
This innovation enables high dynamic range performance in infrared image sensors across diverse lighting conditions.