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A CMOS Image Sensor Dark Current Compensation Using In-Pixel Temperature Sensors.

Accel Abarca^1,2, Albert Theuwissen^1,3

¹EWI Faculty, Electronic Instrumentation Laboratory, Delft University of Technology, Mekelweg 4, 2628 CD Delft, The Netherlands.

Sensors (Basel, Switzerland)

|November 25, 2023

Summary

This summary is machine-generated.

This study introduces a new method for compensating dark current in CMOS image sensors (CIS) using in-pixel temperature sensors (IPTS). This technique effectively reduces dark signal and non-uniformity across a wide temperature range.

Keywords:

CMOS image sensor dark current compensation in-pixel temperature sensors

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Area of Science:

Electronics
Sensor Technology
Image Processing

Background:

Dark current in CMOS image sensors (CIS) significantly degrades image quality, especially at varying temperatures.
Existing dark current compensation methods often lack precision or require complex calibration.
In-pixel temperature sensors (IPTS) offer a potential solution for localized, real-time compensation.

Purpose of the Study:

To present a novel technique for dark current compensation in CIS using IPTS.
To enable dual functionality of 4T pixels as both image sensors and temperature sensors.
To validate the effectiveness of the proposed method across a wide temperature range (-40 °C to 90 °C).

Main Methods:

Utilizing the 4T pixel structure for dual functionality as an image pixel and a temperature sensor.
Generating an artificial dark reference frame based on IPTS measurements and calibrated dark current temperature behavior.
Subtracting the artificial dark frame from actual images for dark signal reduction.

Main Results:

Demonstrated IPTS with an average temperature coefficient (TC) of 1.15 mV/°C and ±0.55 °C inaccuracy.
Analyzed the impact of temperature on conversion gain, amplifier gain, and ADC performance.
Achieved approximately 80% median dark signal compensation and 55% reduction in non-uniformity.

Conclusions:

The proposed IPTS-based dark current compensation technique is effective for CIS.
Dual-function 4T pixels provide a practical approach for localized temperature sensing and compensation.
The method significantly improves image quality by reducing dark signal and non-uniformity over a broad temperature spectrum.