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Published on: March 27, 2018
Phase Conductance of BiFeO3 Film
Yufeng Wang1, Peng Zhou1, Leonid Fetisov2
1Ministry of Education Key Laboratory for Green Preparation and Application of Functional Materials, Hubei Provincial Key Laboratory of Polymers, Collaborative Innovation Center for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
This study reveals that the tetragonal-like phase of bismuth ferrite (BiFeO3) films shows higher conductance due to strain relaxation and polarization switching. These findings are crucial for developing new nanoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Epitaxial BiFeO3 films exhibit distinct tetragonal-like (T-like) and rhombohedral-like (R-like) phases.
- Understanding the local electrical properties of these phases is crucial for device applications.
Purpose of the Study:
- To systematically investigate the local conductance of T-like and R-like BiFeO3 phases.
- To explore the phase transitions and their underlying mechanisms.
- To correlate conductance with material properties and polarization states.
Main Methods:
- Conductive atomic force microscopy (CAFM) was employed to probe local conductance.
- Electric poling and tip voltage were used to induce and study phase transitions.
- Analysis of interface potential barriers and polarization switching effects.
Main Results:
- A mutual phase transition between T-like and R-like BiFeO3 was observed at higher tip voltages, attributed to strain relaxation and polarization switching.
- The T-like phase demonstrated significantly higher conductance compared to the R-like phase.
- Reversible low- and high-current states were achieved in the T-like phase through polarization switching.
Conclusions:
- The local conductance of BiFeO3 phases is strongly dependent on phase structure, strain, and electric fields.
- The observed phenomena offer pathways for designing advanced nanoelectronic devices.
- Results provide insights for developing novel voltage and strain sensors based on BiFeO3.
