Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Facile tailoring of the electrical transport in representative hole transport materials by molecular doping.

RSC advances·2022

Same author

Exploring the temperature effect on hole transport properties in organic bulk heterojunctions.

RSC advances·2022

Same author

Stabilizing black-phase formamidinium perovskite formation at room temperature and high humidity.

Science (New York, N.Y.)·2021

Same author

Terlipressin for septic shock patients: a meta-analysis of randomized controlled study.

Journal of intensive care·2019

Same author

One-step synthesis of hexylresorcinol calix[4]arene-capped ZnO-Ag nanocomposites for enhanced degradation of organic pollutants.

Journal of colloid and interface science·2019

Same author

Facile fabrication of visible light photoelectrochemical immunosensor for SCCA detection based on BiOBr/Bi<sub>2</sub>S<sub>3</sub> heterostructures via self-sacrificial synthesis method.

Talanta·2019

Search research articles

Related Experiment Video

Updated: Jul 10, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory.

Bixin Li^1,2,3, Shiyang Zhang¹, Lan Xu¹

¹School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China.

|November 25, 2023

Summary

Polymer resistive switching materials offer flexible, high-density data storage solutions beyond silicon limits. These advanced materials are key for next-generation information technology and neuromorphic computing.

Keywords:

biomaterials data storage memristors polymer resistive switching memory

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Related Experiment Videos

Last Updated: Jul 10, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

Area of Science:

Materials Science
Electronics
Computer Engineering

Background:

Traditional silicon-based technologies face limitations in meeting demands for high-capacity, efficient information storage and processing.
The need for ultrasmall, high-density, flexible, biocompatible, and recyclable storage solutions is increasing due to information explosion and AI.
Polymer-based resistive memory materials present a promising alternative to silicon.

Purpose of the Study:

To review polymer-based resistive switching materials for next-generation information storage and neuromorphic computing.
To summarize memory device structures, effects, and mechanisms in polymers.
To highlight recent advances and discuss future prospects of polymer memory technologies.

Main Methods:

Literature review of polymer resistive switching materials.
Summary of memory device architectures and operational principles.
Analysis of recent developments in various polymer types for memory applications.

Main Results:

Polymer materials exhibit advantages such as molecular design flexibility, volatile/non-volatile storage, and facile fabrication.
Recent advances include single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory.
Polymer-based memristors show potential for high-performance switching devices.

Conclusions:

Polymer resistive memory materials are crucial for overcoming the limitations of silicon-based technology.
Advances in polymer memristors pave the way for novel information storage and neuromorphic computing applications.
Further development in polymer memory materials and devices will drive future information technology innovation.