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Integration of Large-Area Halide Perovskite Single Crystals and Substrates via Chemical Welding Using an Ionic Liquid
Min Kyu Kim1, Young Seung Choi1, Dooho Kim2
1Department of Materials Science and Engineering, KAIST, 291, Daehak-ro, Yuseong-gu, Daejeon-si 34141, Republic of Korea.
Abstract:
The large carrier lifetime mobility product and strong stopping power for high-energy X-rays make halide perovskites an attractive candidate for next-generation X-ray detectors. In particular, high-energy X-rays in the range of several tens of keV require halide perovskite absorber layers with thicknesses exceeding a few millimeters. To avoid carrier scattering caused by grain boundaries at such thicknesses, the utilization of single crystals is desirable. Large-area single crystals are predominantly grown in a freestanding form, and integration onto a substrate is necessary for the fabrication of commercial devices. However, an effective method for integrating large single crystals onto a substrate has not yet been developed. In this study, a large-area (20 cm2) MAPbBr3 single crystal is bonded to an indium tin oxide (ITO) substrate using an ionic liquid, showing strong adhesion strength of 164 kPa. X-ray detectors based on ITO/MAPbBr3 single crystal bonded by methylammonium acetate achieved excellent sensitivity of 91,200 μC Gyair-1 cm-2, the highest among substrate-integrated halide perovskite single crystal X-ray detectors.
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