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Updated: Jul 9, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Correlation between the density of defect states (DDS) and cross-linking of corner/edge sharing GeSe4 tetrahedral

Shiv Kumar Pal1, A Dahshan2, Neeraj Mehta1

  • 1Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, 221005, India.

Heliyon
|November 29, 2023
PubMed

Keywords:
A.C. conductivityAmorphous materialsDefectsDensity of defect statesElectrical properties

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