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Schottky junction enhanced H2 evolution for graphitic carbon nitride-NiS composite photocatalysts
Wenhui Yue1, Zehong Xu1, Muhammad Tayyab1
1Key Laboratory for Advanced Materials, Shanghai Engineering Research Center for Multi-media Environmental Catalysis and Resource Utilization, School of Chemistry and Molecular Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, PR China.
Abstract:
As one of the most promising photocatalysts for H2 evolution, graphitic carbon nitride (CN) has many appealing attributes. However, the activity of pristine CN remains unsatisfactory due to severe charge carrier recombination and lack of active sites. In this study, we report a two-step approach for the synthesis of CN nanotubes (TCN) loaded with NiS nanoparticles. The resulting composite photocatalysts gave a H2 evolution rate of 752.9 μmol g-1 h-1, which is 42.3 times higher compared to the pristine CN photocatalyst. Experimental and simulation results showed that the Schottky junction which was formed between TCN and NiS was key to achieving high activity. This is because the formation of Schottky junction prevented the backflow of electrons from NiS to TCN, which improved charge separation efficiency. More importantly, it also led to the accumulation of electrons on NiS, which significantly weakened the SH bond, such that the intermediate hydrogen species desorbed more easily from NiS surface to promote H2 evolution activity.
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