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Metal-insulator transition and resistive switching in Y-doped CeO2 ceramics
Fawaz Almutairi1,2, Meshari Alotaibi3, Anthony R West2
1Department of Physics, College of Science, Al Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, Saudi Arabia.
Abstract:
Y-doped ceria, Y0.16Ce0.84O1.92, is an oxide ion conductor that shows n-type conductivity under a small applied voltage. With increasing voltage, resistive switching by 2-3 orders of magnitude occurs that is reversible with some hysteresis and is enhanced in atmospheres of reduced pO2. The switching is a bulk effect, is not associated with Schottky barriers or with a crystallographic transition, occurs rapidly after a premonitory onset period depending on conditions and shows characteristics of a Mott transition. This is the third known example of low field-induced resistive switching in a bulk ceramic and represents an emergent phenomenon in materials that are taken outside their zone of thermodynamic stability.
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