Mid-IR lasing in HgCdTe multiple quantum well edge-emitting ridges

Area of Science:

• Materials Science
• Optoelectronics
• Quantum Engineering

Background:

• Mercury cadmium telluride (HgCdTe) quantum wells (QWs) on alternative GaAs (013) substrates are promising for mid-infrared coherent emitters.
• Fabrication of microresonators is crucial for developing efficient semiconductor lasers.

Purpose of the Study:

• To develop a fabrication process for ridge microresonators in HgCdTe/CdHgTe QW waveguide heterostructures.
• To analyze the optical emission properties of these microresonators and assess their lasing performance.

Main Methods:

• Photolithography and ion etching were employed to create ridge microresonators.
• Emission spectra of processed and unprocessed HgCdTe QW structures were measured under optical excitation.
• Temperature-dependent lasing characteristics and carrier lifetimes were analyzed.

Main Results:

• A significant reduction in emission spectra width was observed, indicating lasing in the 9.2–7.1 µm range between 8–120 K.
• Processed samples exhibited faster temperature quenching of lasing and reduced carrier lifetimes compared to the as-grown structure.
• Defects introduced during the ion etching process are likely responsible for the compromised performance.

Conclusions:

• The developed fabrication process enables lasing in HgCdTe QW microresonators.
• Ion etching-induced defects negatively impact laser performance, necessitating process optimization.
• Further development is required for HgCdTe-based lasers targeting specific mid-IR and longer wavelength applications.