Compact plasmon modulator based on the spatial control of carrier density in indium tin oxide

To keep pace with the demands of semiconductor integration technology, a semiconductor device should offer a small footprint. Here, we demonstrate a compact electro-optic modulator by controlling the spatial distribution of carrier density in indium tin oxide (ITO). The proposed structure is mainly composed of a symmetrical metal electrode layer, calcium fluoride dielectric layer, and an ITO propagating layer. The carrier density on the surface of the ITO exhibits a periodical distribution when the voltage is applied on the electrode, which greatly enhances the interaction between the surface plasmon polaritons (SPPs) and the ITO. This structure can not only effectively improve the modulation depth of the modulator, but also can further reduce the device size. The numerical results indicate that when the length, width, and height of the device are 14 µm, 5 µm, and 8 µm, respectively, the modulation depth can reach 37.1 dB at a wavelength of 3.66 µm. The structure can realize a broadband modulation in theory only if we select a different period of the electrode corresponding to the propagating wavelength of SPPs because the modulator is based on the scattering effect principle. This structure could potentially have high applicability for optoelectronic integration, optical communications, and optical sensors in the future.