High transparent conductive Ga-doped ZnO-based multilayer thin films with embedded ultrathin TiN layer deposited in...

To avoid metal layer oxidation during the deposition of transparent conductive oxide (TCO)/metal/TCO multilayer films in an oxygen-containing atmosphere, the ultra-thin (<10 nm) titanium nitride (TiN) layer has been proposed to replace metal embedding in gallium-doped zinc oxide (GZO) film for the development of indium-free transparent electrodes. The effects of TiN thickness on the structure, morphology, electrical, and optical properties of GZO/TiN/GZO multilayer thin films deposited in argon-oxygen mixtures on glass substrates by magnetron sputtering are investigated. The experimental results reveal that multilayers with the 8 nm-thick TiN layer have the optimal performance (figure of merit of 2.75 × 10^-1 Ω^-1): resistivity of 4.68 × 10^-5 Ω cm, and optical transmittance of above 91% in the visible region, which is superior to the sandwich film with the metal embedded layer.