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Related Experiment Video

Updated: Jul 4, 2026

Development of a 3D Graphene Electrode Dielectrophoretic Device

Development of a 3D Graphene Electrode Dielectrophoretic Device

Published on: June 22, 2014

A Perovskite-Graphene Device for X-ray Detection.

J Snow¹, C Olson¹, E Torres²

¹Nuclear Engineering Program, Department of Civil and Environmental Engineering, University of Utah, Salt Lake City, UT 84112 USA.

|December 4, 2023

Summary

This summary is machine-generated.

This study developed a perovskite-based graphene field effect transistor (P-GFET) for X-ray detection. The P-GFET shows promise as a low-energy X-ray detector, with sensitivity correlating positively with source-drain voltage.

Keywords:

GFET Graphene X-ray perovskite radiation detection

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Area of Science:

Materials Science
Condensed Matter Physics
Semiconductor Devices

Background:

Graphene field-effect transistors (GFETs) offer unique electronic properties.
Perovskite materials are emerging as sensitive optoelectronic materials.
X-ray detection technologies are crucial for medical imaging and scientific research.

Purpose of the Study:

To investigate the performance of a perovskite-based graphene field-effect transistor (P-GFET) for X-ray detection.
To evaluate the sensitivity and responsivity of the P-GFET across various X-ray parameters.
To assess the feasibility of P-GFETs as low-energy X-ray photon detectors.

Main Methods:

Fabrication of P-GFETs by spin-coating methylammonium lead iodide (MAPbI3) perovskite onto GFET chips.
Irradiation of devices using a molybdenum target X-ray tube with controlled voltage and current.
Dose measurements using ion-chamber and thermo-luminescent dosimeters.
GEANT4 and MCNP simulations for dose rate and incident power determination.

Main Results:

Sensitivity showed a strong positive correlation with source-drain voltage.
Sensitivity decreased exponentially with increasing X-ray tube current and energy.
Similar trends were observed for responsivity.
The P-GFET demonstrated feasibility for detecting low-energy X-rays (< 70 keV).

Conclusions:

P-GFETs are viable candidates for low-energy X-ray detection.
Device performance is tunable via source-drain voltage and X-ray parameters.
Further research can optimize P-GFETs for advanced X-ray sensing applications.