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Published on: July 3, 2015
In-Plane Chemical Ordering (Mo2/3R1/3)2AlB2 (R = Tb, Dy, Ho, Er, Tm, and Lu) i-MAB Phases and their Two-Dimensional
He Chong1,2, Zhaohui Chen1,2, Hongyun Guo1,2
1Key Laboratory of Electromagnetic Processing of Materials, Ministry of Education, Northeastern University, Shenyang, 110819, China.
Researchers synthesized novel rare-earth-containing i-MAB phases and their 2D derivatives (2D-MBene). Nitridation of 2D-MBene enhanced specific capacitance for supercapacitor applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Hexagonal in-plane chemical ordering (i-MAB) phases offer unique magnetic and structural properties.
- Rare-earth (R) elements in i-MAB phases influence magnetic coupling and anisotropy.
- Two-dimensional (2D) derivatives, such as 2D-MBene, present opportunities for novel material applications.
Purpose of the Study:
- To synthesize and characterize a new family of rare-earth-containing i-MAB phases.
- To explore the synthesis and modification of 2D-MBene materials derived from these i-MAB phases.
- To investigate the application of modified 2D-MBene materials in supercapacitors.
Main Methods:
- Synthesis of hexagonal (Mo2/3R1/3)2AlB2 (R = Tb, Dy, Ho, Er, Tm, Lu) i-MAB phases.
- Chemical etching to obtain 2D-MBene derivatives with rare-earth vacancies.
- One-step nitridation of 2D-MBene using nitrogen gas.
- Phase conversion analysis and specific capacitance measurements.
Main Results:
- Successful synthesis of R-3m hexagonal i-MAB phases with varying rare-earth elements.
- Generation of 2D-MBene materials with rare-earth atom vacancies.
- Modification of 2D-MBene surface properties via nitridation.
- Achieved a phase conversion to Mo2N with an optimized specific capacitance of 229 F g⁻¹.
Conclusions:
- The study introduces a new class of rare-earth-containing i-MAB phases and their 2D derivatives.
- Nitridation offers a tunable method to modify 2D-MBene properties.
- These modified 2D materials show significant potential for supercapacitor applications.
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