Facile synthesis ofβ-Ga₂O₃based high-performance electronic devices via direct oxidation of solution-processed...

Gallium oxide (Ga₂O₃) is a promising wide bandgap semiconductor that is viewed as a contender for the next generation of high-power electronics due to its high theoretical breakdown electric field and large Baliga's figure of merit. Here, we report a facile route of synthesizingβ-Ga₂O₃via direct oxidation conversion using solution-processed two-dimensional (2D) GaS semiconducting nanomaterial. Higher order of crystallinity in x-ray diffraction patterns and full surface coverage formation in scanning electron microscopy images after annealing were achieved. A direct and wide bandgap of 5 eV was calculated, and the synthesizedβ-Ga₂O₃was fabricated as thin film transistors (TFT). Theβ-Ga₂O₃TFT fabricated exhibits remarkable electron mobility (1.28 cm²Vs^-1) and a good current ratio (I_on/I_off) of 2.06 × 10⁵. To further boost the electrical performance and solve the structural imperfections resulting from the exfoliation process of the 2D nanoflakes, we also introduced and doped graphene inβ-Ga₂O₃TFT devices, increasing the electrical device mobility by ∼8-fold and thereby promoting percolation pathways for the charge transport. We found that electron mobility and conductivity increase directly with the graphene doping concentration. From these results, it can be proved that theβ-Ga₂O₃networks have excellent carrier transport properties. The facile and convenient synthesis method successfully developed in this paper makes an outstanding contribution to applying 2D oxide materials in different and emerging optoelectronic applications.