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Band Gap Engineering in Ultimately Thin Slabs of CdTe with Different Layer Stackings
Vladimir G Kuznetsov1,2, Anton A Gavrikov2, Alexander V Kolobov2,3
1Ioffe Institute, 26 Polytechnicheskaya Str., 194021 St. Petersburg, Russia.
Ultrathin cadmium telluride (CdTe) slabs exhibit tunable electronic properties. Varying slab thickness allows for wide band gap engineering, suggesting potential for novel electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid-State Chemistry
Background:
- Ultrathin solid slabs display unique properties compared to their bulk counterparts.
- This phenomenon is observed in both traditional 3D materials and van der Waals (vdW) solids at the few-monolayer limit.
Purpose of the Study:
- To investigate the influence of thickness on the band gap of cadmium telluride (CdTe) slabs.
- To compare the band gap variations in the sphalerite and inverted phases of CdTe.
Main Methods:
- Density functional theory (DFT) calculations were employed.
- Band structures and partial densities of states were computed for various slab thicknesses.
- Thermodynamical stability of bulk vdW CdTe was verified.
Main Results:
- Band gap of CdTe slabs varies significantly with thickness, from one to several monolayers.
- Both sphalerite and inverted phases exhibit tunable band gaps.
- A wide range of band gaps can be achieved by controlling slab thickness.
Conclusions:
- Ultrathin CdTe exhibits thickness-dependent electronic properties.
- The tunable band gap of ultrathin CdTe makes it a promising candidate for electronic applications.
- This study provides insights into the potential of vdW CdTe for future electronic materials.
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