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Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural

Fengjun Yan1, Yao Wu1, Yilong Liu1

  • 1School of Integrated Circuits & Wuhan National Laboratory for Optoelectronics & Engineering Research Center for Functional Ceramics of the Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China. dongw@hust.edu.cn.

Materials Horizons
|December 11, 2023
PubMed
Summary
This summary is machine-generated.

Defect engineering enhances ferroelectricity in HfO2-based thin films for advanced electronics. This review covers defect-doping strategies, phase transitions, and future optimization of these promising materials.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Nanotechnology

Background:

  • Unconventional scale-free ferroelectricity in HfO2-based fluorite thin films is crucial for low-power logic and nonvolatile memories.
  • The ferroelectric properties of HfO2 are intrinsically linked to the metastable orthorhombic Pca21 phase.
  • Defect-doping and solid solutions offer pathways to enhance and stabilize ferroelectricity through isovalent or aliovalent engineering.

Purpose of the Study:

  • To review recent advancements in defect-engineered HfO2-based ferroelectrics.
  • To summarize defect-lattice correlations, phase transition kinetics, and oxygen vacancy behavior.
  • To discuss future prospects and challenges in optimizing ferroelectric properties via defect engineering.

Main Methods:

  • Review of defect-doping strategies, including mono-ionic and mixed ion-doping.
  • Analysis of defect-lattice correlations and their impact on phase transition kinetics.
  • Summary of thin film preparation techniques and ion bombardment doping.

Main Results:

  • Defect engineering, through various doping methods, has shown significant promise in enhancing and stabilizing ferroelectricity in HfO2-based materials.
  • Understanding defect-lattice interactions and oxygen vacancy dynamics is key to controlling ferroelectric properties.
  • Progress has been made in thin film preparation and ion bombardment doping for defect introduction.

Conclusions:

  • Defect engineering is a powerful approach for optimizing ferroelectric properties in HfO2-based fluorite thin films.
  • A multiscale structural optimization approach is suggested for further advancements.
  • This review provides insights into the state-of-the-art and future directions for defect-engineered ferroelectrics.