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High performance photodetector based on CdS/CdS0.42Se0.58nanobelts heterojunction
Ran Ma1, Qiuhong Tan1,2, Yingkai Liu1,2
1College of Physics and Electronic Information, Yunnan Normal University, Yunnan, Kunming 650500, People's Republic of China.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|December 11, 2023
Summary
This study developed a novel cadmium sulfide/cadmium sulfide selenide (CdS/CdSSe) nanobelt heterojunction photodetector. This device demonstrates exceptional performance, indicating significant potential for advanced photoelectric applications.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Ternary alloys like CdSSe offer tunable band gaps by adjusting composition.
- CdSSe alloys possess desirable photoelectric properties for device applications.
Purpose of the Study:
- To fabricate and characterize a CdS/CdSSe nanobelt heterojunction photodetector.
- To evaluate the photoelectric performance of the fabricated heterojunction device.
Main Methods:
- Chemical vapor deposition was used to synthesize CdS/CdSSe nanobelts.
- A dry transfer technique was employed to fabricate the heterojunction device.
Main Results:
- The photodetector exhibited a high light switching ratio (6.79 × 10^4).
- Exceptional spectral responsivity (1260 A W^-1) and external quantum efficiency (2.66 × 10^5%) were achieved.
- High detectivity (7.19 × 10^15 cm Hz^1/2 W^-1) and fast response times (45/90 μs) were recorded.
- Performance metrics were comparable to or surpassed existing CdS(Se)-based photodetectors.
Conclusions:
- The CdS/CdSSe nanobelt heterojunction shows great promise for high-performance photodetector applications.
- The tunable nature of CdSSe alloys is advantageous for optoelectronic device development.
