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Updated: Jul 8, 2025

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
Published on: May 23, 2017
Quantifying Strain in Moiré Superlattice
Jiamin Quan1, Ganbin Chen2, Lukas Linhart3
1Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States.
Abstract:
In twisted van der Waals (vdW) bilayers, intrinsic strain associated with the moiré superlattice and unintentionally introduced uniaxial strain may be present simultaneously. Both strains are able to lift the degeneracy of the E2g phonon modes in Raman spectra. Because of the different rotation symmetry of the two types of strain, the corresponding Raman intensity exhibits a distinct polarization dependence. We compare a 2.5° twisted MoS2 bilayer, in which the maximal intrinsic moiré strain is anticipated, and a natural MoS2 bilayer with an intentionally introduced uniaxial strain. By analyzing the frequency shift of the E2g doublet and their polarization dependence, we can not only determine the direction of unintentional uniaxial strain in the twisted bilayer but also quantify both strain components. This simple strain characterization method based on far-field Raman spectra will facilitate the studies of electronic properties of moiré superlattices under the influence of combined intrinsic and external strains.
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