Solution-processed bilayer InGaZnO/In₂O₃thin film transistors at low temperature by lightwave annealing

At low temperatures about 230 °C, bilayer InGaZnO/In₂O₃thin film transistors (TFTs) were prepared by a solution process with lightwave annealing. The InGaZnO/In₂O₃bilayer TFTs with SiO₂as dielectric layer show high electrical performances, such as a mobility of 7.63 cm²V^-1s^-1, a threshold voltage (V_th) of 3.8 V, and an on/off ratio higher than 10⁷, which are superior to single-layer InGaZnO TFTs or In₂O₃TFTs. Moreover, bilayer InGaZnO/In₂O₃TFTs demonstrated a great bias stability enhancement due to the introduction of top InGaZnO film act as a passivation layer, which could prevent the interaction of ambient air with the bottom In₂O₃layer. By using high dielectric constant AlO_xfilm, the InGaZnO/In₂O₃TFTs exhibit an improved mobility of 47.7 cm²V^-1s^-1. The excellent electrical performance of the solution-based InGaZnO/In₂O₃TFTs shows great application potential for low-cost flexible printed electronics.