Fractional Marcus-Hush-Chidsey-Yakopcic current-voltage model for redox-based resistive memory devices.

Area of Science:

• Materials Science
• Electrical Engineering
• Computational Physics

Background:

• Resistive switching memory devices are crucial for next-generation electronics.
• Accurate modeling of resistive switching behavior is essential for device optimization.
• Existing models may not fully capture the complex dynamics of these devices.

Purpose of the Study:

• To propose an enhanced circuit-level model for metal-ionic conductor-metal resistive switching memory.
• To incorporate fractional calculus into the state variable dynamics for improved accuracy.
• To validate the model against experimental data from a specific memory device.

Main Methods:

• Combined the Marcus-Hush-Chidsey electron current equation with a fractional-order Yakopcic equation.
• Introduced a fractional derivative of arbitrary order (0-1) for the state variable dynamics.
• Fitted the model to current-voltage characteristic data from a silicon electrochemical metallization memory device.

Main Results:

• The proposed fractional-order model demonstrates high fidelity in fitting experimental data.
• The model successfully describes the current-voltage characteristics of the tested memory device.
• The inclusion of fractional dynamics enhances the descriptive power of the model.

Conclusions:

• The fractional-order circuit-level model provides a more accurate representation of resistive switching memory behavior.
• This modeling approach can aid in the design and optimization of electrochemical metallization memory devices.
• Fractional calculus offers a powerful tool for describing complex dynamics in solid-state devices.