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Updated: Jul 8, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Zhexue Chen1,2, Yutong Zhang2,3, Ce Zhao1,2
1CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Researchers developed a novel physical method to create sub-nanometer graphene materials (GSNs). These GSNs exhibit significantly enhanced photoluminescence and nonlinear absorption due to their unique broken lattice structure.
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