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Related Experiment Video

Updated: Jul 8, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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Single-Electron Occupation in Quantum Dot Arrays at Selectable Plunger Gate Voltage.

Marcel Meyer1, Corentin Déprez1, Ilja N Meijer1

  • 1QuTech and Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands.

Nano Letters
|December 13, 2023
PubMed
Summary

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Impact of the local valley splitting on the coherence of conveyor-belt spin shuttling in <sup>28</sup>Si/SiGe.

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Highly Tunable Two-Qubit Interactions in Si/SiGe Quantum Dots by Interchanging the Roles of Qubit-Defining Gates.

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Two-qubit logic and teleportation with mobile spin qubits in silicon.

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Demonstration of measurement-free universal logical quantum computation.

Nature communications·2026

We developed a stress voltage method to equalize gate voltages for semiconductor qubits. This technique enables stable charge states in quantum dots, advancing scalable quantum computing hardware.

Area of Science:

  • Quantum Computing
  • Semiconductor Physics

Background:

  • Semiconductor qubits offer a small footprint for scalable quantum computing.
  • Qubit size sensitivity to local environment and gate variations challenges scalability.
  • Current methods require tailored gate voltages for each device, hindering mass production.

Purpose of the Study:

  • To develop a scalable method for tuning gate voltages in semiconductor qubits.
  • To achieve stable charge states in quantum dots using a novel voltage equalization technique.

Main Methods:

  • Utilized temporary application of stress voltages to tune and equalize gate voltages.
  • Investigated charge state stability in a double quantum dot.
  • Extended the method to a 2x2 quadruple quantum dot configuration.
Keywords:
Quantum DotSingle-electron OccupationSpin QubitStress VoltageUniformity

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Last Updated: Jul 8, 2025

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Main Results:

  • Achieved a stable (1,1) charge state in a double quantum dot at identical, predetermined plunger gate voltages.
  • Demonstrated the (1,1,1,1) charge state in a 2x2 quadruple quantum dot with all plunger gates set to 1 V.
  • Showcased the ability to define required gate voltages irrespective of interdot couplings.

Conclusions:

  • The stress voltage method offers a scalable solution for gate voltage control in quantum dots.
  • This technique can simplify control electronics and operations for spin qubit devices.
  • The findings represent a significant advancement in developing robust quantum hardware.