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Updated: Jul 8, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Philipp Brunner1, Roland Würschum1
1Institute of Materials Physics, Graz University of Technology, NAWI Graz, Petersgasse 16, Graz A-8010, Austria.
Positron trapping at grain boundaries (GBs) is crucial in modern materials science, even for micron-sized grains. This study extends models to accurately account for GB trapping alongside intragranular defects.
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