Germination of bean seeds (Vigna unguiculata L. Walp.) in strong electric fields

This paper presents a tutorial for the germination of bean seeds (Vigna unguiculata L. Walp.) in strong electrostatic fields up to 1240 V/cm. The seeds were allowed to germinate under different electric field strengths for 48 h. Although most of such germination experiments did not show any visible effect, the field strength of 945 V/cm strongly increased the seedling's vigor during the early growth stage. In the end, 30 % more yield was obtained from stimulated seeds when compared to the control group. This article postulates for the first time a hypothesis of the mechanism of action of the electric field during germination. In biological cells of any species, water confined between narrow surfaces can undergo a phase transition that shifts its melting point to higher temperatures when an external electric field is applied. This effect has already been known as electrofreezing, and has been confirmed by several experimental and molecular modeling studies. As a consequence, the transport kinetics of molecules across cell organelle membranes might be altered, which in turn leads to different plant properties. With emphasis on the presented method, this work reports: •An inexpensive electric circuit for the generation of strong electric fields•Instructions regarding the setup and operation of an adequate germination chamber.