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Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors.
Yi-Te Lee1, Yu-Ting Huang2,3, Shao-Pin Chiu1
1Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.
ACS Applied Materials & Interfaces
|December 19, 2023
Summary
A new method quantifies Coulomb scattering in two-dimensional (2D) transistors, crucial for improving semiconductor chip performance. This technique analyzes low-frequency noise and transport to understand scattering effects in Indium Selenide (InSe) transistors.
Area of Science:
- Semiconductor Physics
- Materials Science
- Nanotechnology
Background:
- Two-dimensional (2D) transistors are key for next-generation electronics.
- Interfacial Coulomb scattering in 2D materials limits carrier mobility and transistor performance.
- A quantitative method to assess scattering parameters in 2D transistors is needed.
Purpose of the Study:
- To develop and demonstrate a method for quantitatively determining Coulomb scattering parameters in 2D transistors.
- To distinguish between long-range and short-range scattering contributions.
- To investigate the impact of different scattering sources on Indium Selenide (InSe) transistors.
Main Methods:
- Comprehensive analysis of low-frequency noise characteristics.
- Analysis of electrical transport properties.
- Utilizing Indium Selenide (InSe) transistors with varied interfaces as a model system.
Main Results:
- A method to determine Coulomb scattering strength and density of scattering centers was successfully demonstrated.
- The relative contributions of long-range and short-range scattering were distinguished.
- Profound effects of scattering sources on transport and noise in InSe transistors were revealed.
Conclusions:
- Quantitative assessment of scattering parameters in 2D transistors is now feasible.
- This method provides valuable insights for interface engineering in ultrathin-body transistors.
- The findings pave the way for developing high-performance 2D electronic devices.
Keywords:
2D materials2D transistorsCoulomb scattering strengthelectron scatteringindium selenideinterfacial Coulomb scattererslow-frequency noiseMore Related Videos
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