Luminescence in Anion-Deficient Hafnia Nanotubes

Hafnia-based nanostructures and other high-k dielectrics are promising wide-gap materials for developing new opto- and nanoelectronic devices. They possess a unique combination of physical and chemical properties, such as insensitivity to electrical and optical degradation, radiation damage stability, a high specific surface area, and an increased concentration of the appropriate active electron-hole centers. The present paper aims to investigate the structural, optical, and luminescent properties of anodized non-stoichiometric HfO₂ nanotubes. As-grown amorphous hafnia nanotubes and nanotubes annealed at 700 °C with a monoclinic crystal lattice served as samples. It has been shown that the bandgap E for direct allowed transitions amounts to 5.65 ± 0.05 eV for amorphous and 5.51 ± 0.05 eV for monoclinic nanotubes. For the first time, we have studied the features of intrinsic cathodoluminescence and photoluminescence in the obtained nanotubular HfO₂ structures with an atomic deficiency in the anion sublattice at temperatures of 10 and 300 K. A broad emission band with a maximum of 2.3-2.4 eV has been revealed. We have also conducted an analysis of the kinetic dependencies of the observed photoluminescence for synthesized HfO₂ samples in the millisecond range at room temperature. It showed that there are several types of optically active capture and emission centers based on vacancy states in the O_3f and O_4f positions with different coordination numbers and a varied number of localized charge carriers (V⁰, V^-, and V^2-). The uncovered regularities can be used to optimize the functional characteristics of developed-surface luminescent media based on nanotubular and nanoporous modifications of hafnia.