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Updated: Jul 7, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications.

Hyunsung Jun¹, Johyeon Choi¹, Jinyoung Hwang¹

¹The School of Electronics and Information Engineering, Korea Aerospace University, Goyang-si 10540, Republic of Korea.

Sensors (Basel, Switzerland)

|December 23, 2023

Summary

This summary is machine-generated.

This study presents novel silicon nanowire phototransistor arrays for enhanced CMOS image sensors. These devices improve color fidelity and quantum efficiency for better imaging performance.

Keywords:

CMOS image sensors bipolar junction transistor phototransistor silicon nanowire

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Last Updated: Jul 7, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

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Published on: June 23, 2018

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Published on: April 1, 2020

Area of Science:

Materials Science
Electrical Engineering
Optoelectronics

Background:

CMOS image sensors are crucial for digital imaging.
Improving color fidelity and quantum efficiency remains a key challenge.

Purpose of the Study:

To introduce a new design of silicon nanowire phototransistor arrays for enhanced CMOS image sensor performance.
To numerically investigate the characteristics of these novel phototransistors.

Main Methods:

Designing vertical silicon nanowires (Si NWs) for maximal light absorption across the visible spectrum.
Integrating Si NWs with npn bipolar junction transistors (BJTs) for carrier injection and current amplification.
Tailoring phototransistor characteristics by adjusting NW diameters for specific spectral regions (blue, green, red).

Main Results:

Achieved quantum efficiency exceeding 10 due to the synergistic Si NW-BJT combination.
Demonstrated enhanced color purity and amplified output currents by optimizing NW height and doping profiles.
Showcased distinct absorption characteristics for different spectral regions, enabling improved color fidelity.

Conclusions:

The proposed Si NW phototransistor arrays offer a promising design for next-generation CMOS image sensors.
The integration of Si NWs with BJTs significantly boosts device performance, including quantum efficiency and color reproduction.
Numerical investigations confirm the potential for enhanced imaging applications through tailored spectral response and amplified output.