Low Power Volatile and Nonvolatile Memristive Devices from 1D MoO₂-MoS₂ Core-Shell Heterostructures for Future...

Memristors-based integrated circuits for emerging bio-inspired computing paradigms require an integrated approach utilizing both volatile and nonvolatile memristive devices. Here, an innovative architecture comprising of 1D CVD-grown core-shell heterostructures (CSHSs) of MoO₂-MoS₂ is employed as memristors manifesting both volatile switching (with high selectivity of 10⁷ and steep slope of 0.6 mV decade^-1) and nonvolatile switching phenomena (with I_on/I_off ≈10³ and switching speed of 60 ns). In these CSHSs, the metallic core MoO₂ with high current carrying capacity provides a conformal and immaculate interface with semiconducting MoS₂ shells and therefore it acts as a bottom electrode for the memristors. The power consumption in volatile devices is as low as 50 pW per set transition and 0.1 fW in standby mode. Voltage-driven current spikes are observed for volatile devices while with nonvolatile memristors, key features of a biological synapse such as short/long-term plasticity and paired pulse facilitation are emulated suggesting their potential for the development of neuromorphic circuits. These CSHSs offer an unprecedented solution for the interfacial issues between metallic electrodes and the layered materials-based switching element with the prospects of developing smaller footprint memristive devices for future integrated circuits.