Low Power Volatile and Nonvolatile Memristive Devices from 1D MoO₂-MoS₂ Core-Shell Heterostructures for Future...

Area of Science:

• Materials Science
• Electrical Engineering
• Computer Science

Background:

• Emerging bio-inspired computing paradigms require integrated circuits utilizing both volatile and non-volatile memristive devices.
• Interfacial issues between metallic electrodes and layered materials hinder the development of advanced memristors.

Purpose of the Study:

• To develop an innovative memristor architecture using 1D core-shell heterostructures (CSHSs) of MoO2-MoS2.
• To demonstrate the dual volatile and non-volatile switching capabilities of these CSHSs memristors.
• To explore their potential for neuromorphic circuits and integrated electronics.

Main Methods:

• Fabrication of 1D CVD-grown MoO2-MoS2 core-shell heterostructures (CSHSs).
• Characterization of memristive switching behavior, including volatile and non-volatile phenomena.
• Evaluation of device performance metrics such as selectivity, switching speed, and power consumption.
• Emulation of biological synapse functionalities.

Main Results:

• The MoO2-MoS2 CSHSs memristors exhibited high selectivity (10^7) and steep slope (0.6 mV/decade) for volatile switching.
• Non-volatile switching showed an Ion/Ioff ratio of approximately 10^3 and a switching speed of 60 ns.
• Volatile devices demonstrated low power consumption (50 pW per set transition, 0.1 fW standby).
• Non-volatile devices emulated synaptic plasticity and paired pulse facilitation.

Conclusions:

• The developed CSHSs offer a robust solution for interfacial challenges in memristor fabrication.
• These memristors show significant potential for creating compact, efficient integrated circuits and neuromorphic systems.
• The dual switching capability and synaptic emulation pave the way for advanced bio-inspired computing architectures.