Solar-blind ultraviolet photodetector based on Nb₂C/β-Ga₂O₃heterojunction

β-Ga₂O₃has been widely investigated for its stability and thermochemical properties. However, the preparation ofβ-Ga₂O₃thin films requires complex growth techniques and high growth temperatures, and this has hindered the application ofβ-Ga₂O₃thin films. In this study,β-Ga₂O₃thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based onβ-Ga₂O₃with a photocurrent of 2.54 × 10^-6A and a dark current of 1.19 × 10^-8A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb₂C and Ga₂O₃to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W^-1) and good stability. Thus, the Nb₂C/β-Ga₂O₃heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection.