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Published on: September 19, 2020
Negative Capacitance and Dielectric Constant of Nanocomposite SiAlON(Si) Films with Semiconductor Nanoparticles
Anatoliy Evtukh1,2, Anatoliy Kizjak1, Oleh Bratus1
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Nauky ave., Kyiv 03028, Ukraine.
Abstract:
The electrical properties of nanocomposite SiAlON(Si) films containing Si nanoclusters embedded into amorphous SiAlON matrix have been studied by measurements of DC current-voltage and AC capacitance-voltage characteristics. Analysis of the results allowed us to conclude the existence of a negative dielectric constant. The temperature dependence of the negative dielectric constant has been obtained and analyzed. The negative capacitance has been revealed during measurements of capacitance-voltage characteristics at testing signal frequency of 2 kHz. The negative capacitance also points out the appearance of a negative dielectric constant effect. The qualitative model for explanation of negative dielectric constant based on peculiarities of SiAlON(Si) films polarization due to electron capture at Si nanoparticles-amorphous SiAlON matrix interface traps near cathode region has been proposed. In the case of AC C-U measurements, a negative capacitance is observed if conductivity current through the nanocomposite film is relatively high.
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